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- W2014373955 abstract "The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 10 13 cm -3 . But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z 1/2 . For low growth rates, the Z 1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z 1/2 concentration increases with increasing HCl addition." @default.
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- W2014373955 date "2014-02-01" @default.
- W2014373955 modified "2023-10-14" @default.
- W2014373955 title "HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices" @default.
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- W2014373955 doi "https://doi.org/10.4028/www.scientific.net/msf.778-780.210" @default.
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