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- W2014384153 abstract "The effects of point defects in AlxGa1−xN (x = 0-0.33) films with similar threading dislocation densities were investigated. The epitaxial layers were grown under conditions applicable to laser-diode quantum wells, barriers and waveguide layers. The evolution of deep level defect energy and density were quantitatively tracked versus x using deep level optical spectroscopy. Three defect levels were observed, whose defect density increased with x. The energy level of a defect suspected to be related to the group-III vacancy appeared to track the vacuum level, and a near-valence band defect level deepened with respect to the valence band maximum." @default.
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- W2014384153 date "2012-01-23" @default.
- W2014384153 modified "2023-10-16" @default.
- W2014384153 title "The influence of Al composition on point defect incorporation in AlGaN" @default.
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- W2014384153 doi "https://doi.org/10.1063/1.3679681" @default.
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