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• W2014394516 endingPage "1023" @default.
• W2014394516 startingPage "1023" @default.
• W2014394516 abstract "The reaction kinetics describing the CH 3 OH decomposition in CVD conditions are studied by the comparison between the measured and the simulated time-varying gas concentrations. The chemical kinetic calculation for the deposition of the diamondlike film by the conventional tungsten filament method is carried out by making use of a simplified one-dimensional model, and it is shown that CH 3 is the main C -containing radical. The overall sticking probability of CH 3 is roughly estimated as β(CH 3 )=10 -2 for the silicon substrate heated to 1000 K." @default.
• W2014394516 created "2016-06-24" @default.
• W2014394516 creator A5005283726 @default.
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• W2014394516 date "1989-06-01" @default.
• W2014394516 modified "2023-09-23" @default.
• W2014394516 title "Chemical Kinetic Analysis on the Growth Mechanism of Diamondlike Films from a CH₃OH–H₂ Mixture" @default.
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• W2014394516 doi "https://doi.org/10.1143/jjap.28.1023" @default.
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