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- W2014402331 abstract "A two-steps wet-etching fabrication process producing high-quality GaAs microdisks is presented. We report an optical characterization of these microdisks, using the photoluminescence of InAs quantum boxes as an internal light source. Thanks to an improved smoothness of the microdisk sidewall, cavity Q’s as high as 12 000 are observed, which opens very challenging novel application prospects for semiconductor microdisks." @default.
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- W2014402331 date "1999-09-27" @default.
- W2014402331 modified "2023-10-18" @default.
- W2014402331 title "High-<i>Q</i> wet-etched GaAs microdisks containing InAs quantum boxes" @default.
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- W2014402331 doi "https://doi.org/10.1063/1.124894" @default.
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