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- W2014403757 abstract "A new, low temperature (Ba,Sr)TiO3 (BST) MOCVD process has been established at 580°C deposition temperature which can be used for Gbit DRAM applications using TiTiN as barrier material. The process window for BST deposition was investigated in terms of deposition temperature, stoichiometry, film thickness, post annealing treatment and variation of the underlying electrode/barrier layer. Electrical characterization revealed specific capacitance values of 45 fF/μm2 for 25 –30 nm film thickness and 75 fF/μm2 for 10 nm film thickness which is close to the target value for GBit of 80 – 100 fF/μm2. Oxidation resistance of the TiTiN barrier could be shown up to 600°C. Feasibility of this low temperature BST process has been successfully demonstrated using a 4 Mbit test vehicle." @default.
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- W2014403757 date "1999-09-01" @default.
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- W2014403757 title "A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications" @default.
- W2014403757 doi "https://doi.org/10.1016/s0167-9317(99)00393-7" @default.
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