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- W2014432956 abstract "Low-cost, large-scale production of highly photoluminescent semiconductor nanocrystals (NCs) is desirable for a variety of applications. In this paper we report the realization of highly photoluminescent zinc-blende CdSe nanocrystals from room-temperature water-phase synthesis, followed by low-temperature (80 ± 5 °C) chemical etching in a solution of 3-amino-1-propanol/H2O (v/v = 10/1). X-ray diffraction (XRD) and transmission electron microscopy (TEM) data indicate that these CdSe NCs exhibit a cubic, zinc-blende crystal structure. After etching, these CdSe nanocrystals show strong band-edge photoluminescence (with quantum efficiency as high as 50 %) and lack of deep-trap emissions. A high-resolution TEM investigation suggests that this etching not only removes surface irregularities, but also attacks grain boundaries. Moreover, the size distribution reduces upon progressive etching to allow photoluminescence full-width-at-half-maximum (FWHM) values as low as 30 nm." @default.
- W2014432956 created "2016-06-24" @default.
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- W2014432956 date "2006-02-03" @default.
- W2014432956 modified "2023-09-25" @default.
- W2014432956 title "Band-Edge Photoluminescence Recovery from Zinc-Blende CdSe Nanocrystals Synthesized at Room Temperature" @default.
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- W2014432956 doi "https://doi.org/10.1002/adfm.200500319" @default.
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