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- W2014455828 abstract "Abstract Selective growth of Al x Ga 1− x As (0 ⩽ x ⩽ 0.35) embedded in grooves has been achieved by low-pressure OMVPE at 10 Torr. By precise control of the growth thickness, planar buried structures of GaAs and Al x Ga 1− x As multilayers have been obtained in groo 3 to 1000 μm in width. No polycrystalline deposition occurs on areas masked with SiN x films. It has been found that the low-pressure OMVPE growth is remarkably dependent on the crystallographic orientation. In flat-bottomed grooves with vertical side walls, formed by reactive ion beam etching, the layers can be embedded level with the substrate surface, irrespective of whether the groove is in the [110] or [110] direction. In reverse-mesa-shaped grooves formed by chemical etching in the [110] direction, the layers can also be embedded level with the substrate surface. Based on athese results, we discuss growth mechanisms in low-pressure OMVPE, compared to those in atmospheric-pressure OMVPE." @default.
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- W2014455828 date "1986-09-01" @default.
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- W2014455828 title "Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE" @default.
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- W2014455828 doi "https://doi.org/10.1016/0022-0248(86)90315-5" @default.
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