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- W2014457263 abstract "The correlation between dislocation effects on carrier concentration and such growth conditions as growth temperature and As4/Ga flux ratio is investigated for Si-implanted and Si-doped molecular-beam epitaxially grown GaAs. Small Hall devices with a 40×40-μm2 measurement area are used to determine the carrier concentration. Then, the relationship between the carrier concentration and the dislocations surrounding these devices is studied. It is found that an increase in carrier concentration due to the dislocations appears in the Si-implanted epilayer grown at low temperatures and at low As4/Ga flux ratios. On the other hand, it is not affected by the dislocations in the Si-doped epilayers. Furthermore, all epilayers, which have observable dislocation effects, include the 0.8-eV photoluminescence deep level. Finally, the reason for the carrier-concentration increase is proposed." @default.
- W2014457263 created "2016-06-24" @default.
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- W2014457263 date "1987-01-01" @default.
- W2014457263 modified "2023-09-25" @default.
- W2014457263 title "Correlation between dislocation effects on carrier concentration and growth conditions for molecular‐beam epitaxially grown GaAs" @default.
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- W2014457263 doi "https://doi.org/10.1063/1.338832" @default.
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