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- W2014524076 abstract "We propose and demonstrate a metal-insulator-semiconductor (MIS) structure with a gate insulator based on a HfNO–HfTiO nanolaminate stack that has a total thickness of ∼5 nm. Two types of electrodes, Au and Cr, were used and their corresponding performances were compared. Advanced analytical characterization techniques were used to study the influence of annealing on structural, compositional, and electrical characteristics. Two distinct amorphous layers were observed in cross-sectional high resolution transmission microscopy independent of the annealing temperature. The dependence of dielectric constant on annealing temperature was found to be nonmonotonic with a maximum at 750 °C. Structures using a Cr gate electrode exhibit a 1.25–1.35 times larger dielectric constant than those using a Au contact. The minimum quantum mechanical corrected effective oxide thicknesses are 1.29 and 0.86 nm for structures with Au and Cr electrodes, respectively. Structures annealed at 1000 °C exhibit low leakage current densities of 1.5×10−8 and 2.9×10−7 A cm−2 (at an electric field of 2 MV cm−1) for the Au and Cr electrodes, respectively, and a breakdown electric field of ∼10–12 MV cm−1." @default.
- W2014524076 created "2016-06-24" @default.
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- W2014524076 date "2008-06-01" @default.
- W2014524076 modified "2023-09-26" @default.
- W2014524076 title "The use of nanolaminates to obtain structurally stable high-K films with superior electrical properties: HfNO–HfTiO" @default.
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- W2014524076 doi "https://doi.org/10.1063/1.2936895" @default.
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