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- W2014555777 abstract "We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications." @default.
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- W2014555777 date "2014-11-01" @default.
- W2014555777 modified "2023-10-12" @default.
- W2014555777 title "Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS 2 thin film transistor" @default.
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- W2014555777 doi "https://doi.org/10.1016/j.orgel.2014.08.003" @default.
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