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- W2014581004 abstract "We show that in agreement with the ternary Fe–Ga–As phase diagram, the solid-state interdiffusions in epitaxial Fe/GaAs(0 0 1) heterostructures lead, at a temperature of approximately 500 °C, to the formation of thermodynamically stable Fe3GaAs/GaAs(0 0 1) contacts quite similar to the well-known silicide/Si ones. The Fe3GaAs films are made of grains epitaxial on GaAs with a well-defined interface. Their magnetic and electrical properties make Fe3GaAs on GaAs an attractive metallization scheme for future magnetoelectronic devices. The results we report concern (25 or 80 nm Fe)/GaAs(0 0 1) heterostructures annealed at 480 and 500 °C for 10 min and characterized ex situ by He+ Rutherford backscattering and ion channeling, X-ray diffraction, transmission electron microscopy and alternating gradient field magnetometry." @default.
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- W2014581004 date "2004-01-01" @default.
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- W2014581004 title "Fe3GaAs/GaAs(0 01): a stable and magnetic metal-semiconductor heterostructure" @default.
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- W2014581004 doi "https://doi.org/10.1016/s0040-6090(03)01232-x" @default.
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