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- W2014595516 abstract "Hot electron transport is studied in small semiconductor structures by solving the coupled Boltzmann and Poisson equations using a simple relaxation time model and the integral formulation of the transport equation. Especially ballistic transport is investigated by calculating the electron distribution function f(x, v) in a submicron n+−n−−n+ diode. In the n−-region f(x, v) is non-Maxwellian and the ballistic electrons cause a dominant peak in f(x, v). The validity of the relaxation time approximation (RTA) is studied in the case of a large homogeneous electric field by calculating f(x, v) both, in RTA and using the full scattering rates for polar optical phonon scattering. Durch die Lösung der gekoppelten Boltzmann- und Poisson-Gleichung für ein einfaches Relaxationszeitmodell mit Hilfe der integralen Formulierung der Transportgleichung wird heißer Elektronentransport in kleinen Halbleiterstrukturen untersucht. Durch die Berechnung der Elektronen-Verteilungsfunktion f(x, v) in einer submikrometer-n+ −n− −n+ -Diode wird besonders der ballistische Transport betrachtet. Imn− -Bereich hat f(x, v) kein Maxwell-Verhalten und die ballistischen Elektronen bewirken ein dominierendes Maximum in f(x, v). Durch die Berechnung von f(x, v) sowohl mit der Relaxationszeitapproximation (RZA) als auch mit Hilfe der vollständigen Streurate für polare Streuung an optischen Phononen wird die Gültigkeit der RZA untersucht." @default.
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- W2014595516 date "1990-06-01" @default.
- W2014595516 modified "2023-10-17" @default.
- W2014595516 title "Hot Electron Transport in Submicron Semiconductor Devices" @default.
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- W2014595516 doi "https://doi.org/10.1002/pssb.2221590230" @default.
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