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- W2014597461 abstract "Epitaxial growth of thin films on and substrates has been studied using high purity Zn and Se as source materials. The experiments have been performed at 723 and 873 K. The grown films have been evaluated by photoluminescence (PL) measurements, SIMS analysis, ellipsometry, and optical microscopy. The best epitaxial films are grown for the condition of the transport ratio of Zn and Se close to unity. SIMS analysis on the heteroepitaxial films indicates that the dominant acceptor‐type impurities are Li and Na. It is found that the epitaxial films grown on the high purity substrate show improved PL properties compared with those measured on the films grown on substrate under the same growth conditions. It should be noted that the purity of the film grown on substrates is strongly affected by the purity of the substrate." @default.
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- W2014597461 date "1989-08-01" @default.
- W2014597461 modified "2023-10-16" @default.
- W2014597461 title "VPE Growth of ZnSe Thin Films on GaAs ( 100 ) and ZnSe ( 110 ) Substrates" @default.
- W2014597461 doi "https://doi.org/10.1149/1.2097372" @default.
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