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- W2014645513 abstract "The sputtering of PtSi by Ar ions of 10 to 160 keV has been studied by Rutherford backscattering techniques with depth resolutions of 200 Å at normal incidence and 40 Å at extreme glancing angles. The surface layers of the sputtered samples become Pt enriched over depths ranging from 100 to 1600 Å. For a given Ar energy, the Pt enrichment extends approximately over a constant depth and the enrichment increases with increasing Ar dose until steady state is reached. The steady-state composition ratio of Pt to Si at the surface is ∼2.0 for all energies. The sputtering yields of Si before steady state are found to be larger than those of Pt, consistent with Pt enrichment. A phenomenological model, based on preferential ejection of Si from the surface and enhanced diffusion over the range of Ar, explains the present data." @default.
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- W2014645513 date "1978-10-01" @default.
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- W2014645513 title "Sputtering of PtSi" @default.
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- W2014645513 doi "https://doi.org/10.1063/1.324431" @default.
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