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- W2014667599 abstract "Abstract This paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75% and 16.3 mA cm−2, with a final efficiency of about 10%, before light soaking experiments." @default.
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- W2014667599 date "2000-05-01" @default.
- W2014667599 modified "2023-09-26" @default.
- W2014667599 title "Improvement of a-Si:H device stability and performances by proper design of the interfaces" @default.
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- W2014667599 doi "https://doi.org/10.1016/s0022-3093(99)00909-6" @default.
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