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• W2014675145 abstract "Carbon nitride films with β-C3N4 crystals of 200 nm grain size were grown on Si (1 0 0) substrates using magnetron sputtering. These films were characterized by transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. Carbon nitride films had low surface roughness. Maximum N/C ratio of 0.5 was achieved in the films. Chemical bonds of sp, sp2 and sp3 coexisted in the films. The fraction of each bond was related to the deposition conditions. The resistivities of the films were measured, which ranged from 1×103 to 1×107 Ω cm. The measured resistivity results indicated that the carbon nitride films had semiconductive properties. The resistivity largely depended on the sp3/sp2 ratio. Effects of N2 fraction, target current and substrate bias were investigated. All these deposition parameters had influence on the chemical bonds of the films, and on the resistivities too. High sp3/sp2 ratio resulted in high resistivity." @default.
• W2014675145 created "2016-06-24" @default.
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• W2014675145 date "2002-05-01" @default.
• W2014675145 modified "2023-09-23" @default.
• W2014675145 title "Electrical properties of reactively sputtered carbon nitride films" @default.
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• W2014675145 doi "https://doi.org/10.1016/s0040-6090(02)00243-2" @default.
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