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• W2014721497 abstract "The results of measurements of the intrinsic stress in hydrogenated amorphous silicon (a-Si:H) films deposited by ion beam sputtering are presented. The data show that the total intrinsic stress is composed of growth stress and hydrogen induced stress. At high hydrogen concentration (> 24%), an abrupt decrease in stress is observed which correlates with a microstructural change as shown by SEM and spectrosoopic ellipsometry measurements. The change in microstructure is accompanied by a modification in the IR transmission spectrum at 2000 cm−1 indicating a change in hydrogen bonding configuration or in local environment near SiH bonds. A model is proposed which reconciles the observation of both tensile and compressive stress in unhydrogenated silicon reported in the literature." @default.
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• W2014721497 date "1986-08-01" @default.
• W2014721497 modified "2023-10-02" @default.
• W2014721497 title "Effect of hydrogen on the intrinsic stress in ion beam sputtered amorphous silicon films" @default.
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• W2014721497 doi "https://doi.org/10.1016/0022-3093(86)90001-3" @default.
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