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- W2014722010 abstract "In this paper, integration of spectroscopic ellipsometry in a vertical furnace for measurement and control during chemical vapour deposition and thermal oxidation is presented. The major goal of this activity was to adapt the ellipsometer arrangement to the furnace geometry with a minimum impact on the furnace process performance. Modifications in the furnace geometry were restricted as far as possible, to show that a fast integration in existing industrial equipment with minor costs is possible. This aim led to a novel beam-guiding system. The light beam is reflected by four prisms on its way to the sample inside the furnace and back to the ellipsometer. Therefore, a method was evaluated to correct the phase shift caused by the prisms. This setup has been used for the in situ characterization of multi-layer processing in the vertical furnace. The measurements during processes require the high-temperature dielectric function of the used materials, so a systematic study was started to determine the dielectric functions of relevant semiconductor materials at process temperatures. These data were used to build appropriate optical models for in situ monitoring of the layer structure such as the thickness or the crystallinity. Two different optical models were compared using the combination of the high-temperature dielectric function of amorphous silicon and single-crystalline silicon, or that of amorphous silicon and polycrystalline silicon. The system has been used for high-temperature processes, such as monitoring and control of thermal oxidation terminated by end-point detection or the monitoring of the crystallization of amorphous silicon." @default.
- W2014722010 created "2016-06-24" @default.
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- W2014722010 date "2001-05-01" @default.
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- W2014722010 title "In situ spectroscopic ellipsometry in vertical furnace: monitoring and control of high-temperature processes" @default.
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- W2014722010 doi "https://doi.org/10.1016/s0042-207x(01)00139-7" @default.
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