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- W2014725618 abstract "In this paper we report on the extrinsic n- and p-doping of CdTe layers, grown by organometallic vapor phase epitaxy. Triethylindium and arsine gas were used as n- and p-type dopants respectively, with doping levels of around 1017 cm-3 in both cases. Layers were grown on both semi-insulating CdTe and GaAs substrates. Layers grown on semi-insulating GaAs had an intervening 1–2 μm undoped CdTe layer to relieve the strain caused by the large (14.6%) lattice mismatch of the CdTe-GaAs combination. Van der Pauw measurements were made to evaluate the quality of these layers, and mobility values as high as 3600 cm2/V h- s obtained at 40 K for lightly doped n-type samples. Grown junctions, made using extrinsic doped layers, have resulted in diodes with excellent electrical characteristics." @default.
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- W2014725618 date "1988-01-01" @default.
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- W2014725618 title "Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy" @default.
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- W2014725618 doi "https://doi.org/10.1016/0022-0248(90)90721-v" @default.
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