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• W2014726551 endingPage "085012" @default.
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• W2014726551 abstract "The photoluminescence of an electron inversion layer with a monolayer of carbon acceptors in GaAs was investigated at liquid helium temperatures. In the limit of high laser illumination the luminescence line approaches a hat shape, the expected form if the recombination center is a single isolated acceptor. At medium illumination the line takes on a trapezoidal form, and in the small illumination limit a triangular shape emerges. The line shape variations could be traced back to the interaction of the carbon acceptors which is ruled by the illumination strength. Acceptor–acceptor interactions spread the distribution of transition energies and initiate a transfer of oscillator strength. The triangular line shape at low illumination is a clear signature of an impurity band formed in the carbon monolayer." @default.
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• W2014726551 date "2013-07-05" @default.
• W2014726551 modified "2023-09-26" @default.
• W2014726551 title "Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures" @default.
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• W2014726551 doi "https://doi.org/10.1088/0268-1242/28/8/085012" @default.
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