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- W2014733764 abstract "Abstract Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the ~7% lattice mismatch on the InAs layer properties. The most cost effective and promising method appears to be the growth of low temperature buffer (LTB) InAs layer at ~400 °C followed by a thick InAs layer at ~600 °C. There is a scarcity of available information about the structural properties of the LTB layers, their background conductivity type and level of doping. We have found that a predominant part of the threading dislocations generated at the interface annihilate within the first 400 nm. The average misfit dislocation spacing is 6.15 nm, proving that the LTB InAs/GaAs interface is nearly completely relaxed. XRD measurements have revealed a well pronounced deformation decrease in the LTB layers for thicknesses above 300 nm. The LTB InAs layer is n-type with carrier concentration of the order of 5×10 16 cm −3 and can be additionally doped with Te and hence can serve as a bottom contact layer. The morphology of unintentionally doped InAs layer grown at 600 °C upon the LTB shows sub-nanometer flatness and carrier concentration of the order of 5×10 15 cm −3 ." @default.
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- W2014733764 date "2014-06-01" @default.
- W2014733764 modified "2023-10-14" @default.
- W2014733764 title "Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates" @default.
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- W2014733764 doi "https://doi.org/10.1016/j.jcrysgro.2014.03.031" @default.
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