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- W2014736738 abstract "Thick and low-doped epilayers with a low Z 1/2 center concentration were grown on 8 o off-cut 4H-SiC(0001)Si-face substrate. Two post-growth processes, namely, the C + -implantation/annealing process or the thermal oxidation/Ar annealing process, were applied to the thick epilayers. The dependence of the Z 1/2 center concentration and the carrier lifetime on process conditions was investigated. Under proper conditions, both processes could eliminate the Z 1/2 center to a depth of 100 μm or more, and considerably improved the carrier lifetime while maintaining the surface roughness comparable to that of the as-grown sample. The effect of the post-growth processes applied on C-face is also presented." @default.
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- W2014736738 date "2012-05-01" @default.
- W2014736738 modified "2023-10-14" @default.
- W2014736738 title "Growth of 4H-SiC Epilayers and Z<sub>1/2</sub> Center Elimination" @default.
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- W2014736738 doi "https://doi.org/10.4028/www.scientific.net/msf.717-720.81" @default.
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