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• W2014793997 abstract "We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In–Ga–Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In–Ga–Zn-oxide layer was formed over the S/D electrode. Since the upper portion of the In–Ga–Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In–Ga–Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive." @default.
• W2014793997 created "2016-06-24" @default.
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• W2014793997 date "2010-03-01" @default.
• W2014793997 modified "2023-10-06" @default.
• W2014793997 title "Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors" @default.
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• W2014793997 doi "https://doi.org/10.1143/jjap.49.03cc02" @default.
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