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- W2014836888 abstract "This paper presents an analytical model for determining the d.c. characteristics of GaAs-OPFET (optically controlled field effect transistor). The model takes into account all the major effects that determine the device characteristics in the illuminated condition. Calculations have been carried out for a GaAs-OPFET to examine the effect of illumination on current-voltage characteristics, drain-to-source capacitance (Cds), internal gate-to-source capacitance (Cgs), drain-to-source resistance (Rds) and transconductance (gm). The model takes into account the effect of photo-generation in the semi-insulating substrate region. The semi-insulating nature of substrate has been modeled accurately for the first time." @default.
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- W2014836888 title "An analytical model of GaAs OPFET" @default.
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