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• W2014842122 startingPage "05FW03" @default.
• W2014842122 abstract "Cu(In,Ga)Se 2 (CIGS) solar cells are deemed one of the highest conversion efficiency thin-film solar cells, and the utilization of flexible (stainless steel; SUS) substrates offers several advantages in terms of lowering manufacturing costs. In this work, CIGS films on SUS substrates are deposited by the so-called “multi layer precursor method” using multi layer co-evaporation of material sources. The examination concentrates on the influence of growth temperature and Ga/III, Ga/(In + Ga), profiles of CIGS layers on the cell performance. According to the results, CIGS crystallization is primarily manipulated by growth temperature. Ultimately, the deposition of CIGS on a flexible SUS substrate can be readily controlled to obtain a suitable double Ga/III-grading profile with large grains of CIGS for a high cell efficiency of 16.05%." @default.
• W2014842122 created "2016-06-24" @default.
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• W2014842122 date "2014-03-20" @default.
• W2014842122 modified "2023-09-25" @default.
• W2014842122 title "Multi layer precursor method for Cu(In,Ga)Se₂ solar cells fabricated on flexible substrates" @default.
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• W2014842122 doi "https://doi.org/10.7567/jjap.53.05fw03" @default.
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