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- W2014863873 abstract "To improve reliability of metal covering in a CMOS 1 Micron advanced technology, a sloping of vias during etching is required. This needs a photoresist sidewall action, since standard sidewalls created in step and repeat lithography are close to 85°. As classical thermal flow techniques are not suitable for small dimensional patterns, a new method has been developed, which uses the partial resolution of submicron patterns through the lens of a stepper. Such a technique requires modification of .the reticle but in no way changes the normal lithography process. Using this method, it is possible to reproducibly obtain slopes as low as 55°. A complete parametric experimental study, simulation results and pilot line applications are presented. This new technique has excellent repeatibility and process control, and has therefore been successfully put into application in the fabrication of vias in a double metal technology as well as for increasing the contrast of alignment marks in an automatic alignment system. The etching process of the vias is therefore simplified." @default.
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- W2014863873 date "1987-09-17" @default.
- W2014863873 modified "2023-09-27" @default.
- W2014863873 title "A Novel Technique For The Control Of Resist Profiles When Exposing With Steppers." @default.
- W2014863873 doi "https://doi.org/10.1117/12.975599" @default.
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