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- W2014865195 abstract "Atomically perfect lines of bismuth (200 nm long or more) form in the Si(001) surface when a bismuth covered surface is annealed around the bismuth desorption temperature. We describe modeling results for the structure of these lines based on tight binding calculations, examine evidence for their extraordinary perfection, and describe the procedure used to fit the tight binding parametrization. The perfection of the lines is found to arise from a combination of thermodynamic and kinetic reasons." @default.
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- W2014865195 date "2000-09-15" @default.
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- W2014865195 title "Structure of atomically perfect lines of bismuth in the Si(001) surface" @default.
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- W2014865195 doi "https://doi.org/10.1103/physrevb.62.7237" @default.
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