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• W2014889723 endingPage "L108" @default.
• W2014889723 startingPage "L108" @default.
• W2014889723 abstract "We have compared the kinetics and the evolution of microstructure of the solid phase crystallized a-(Si/Si 0.7 Ge 0.3 ) and a-(Si 0.7 Ge 0.3 /Si) bilayer films deposited on SiO 2 by low pressure chemical vapor deposition (LPCVD). It was identified that the overall thermal budget of the SPC, the grain size, and the evolution of microstructure were drastically different in these two samples. In particular, we have observed that the nucleation of an a-(Si/Si 0.7 Ge 0.3 ) bilayer film started at the interface between the Si 0.7 Ge 0.3 film and the SiO 2 substrate while that of an a-(Si 0.7 Ge 0.3 /Si) started from the surface of the Si 0.7 Ge 0.3 layer located at the surface. By changing the nucleation sites from interface to surface. the grain morphology was changed from elliptical to equiaxed and the grain size was enlarged from 0.3 µm to about 8 µm. However this resulted in an overall thermal budget increase." @default.
• W2014889723 created "2016-06-24" @default.
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• W2014889723 date "1998-02-01" @default.
• W2014889723 modified "2023-10-17" @default.
• W2014889723 title "A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si0.7Ge0.3/Si) and a-(Si/Si0.7Ge0.3) Bilayer Films; Interface versus Surface Nucleated Films" @default.
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• W2014889723 doi "https://doi.org/10.1143/jjap.37.l108" @default.
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