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- W2014912699 abstract "Abstract Recent in situ applications of spectroscopic phase modulated ellipsometry (SPME), from 0.25 to 11 μm, to studies of thin-film semiconductor processes are reviewed. In the ultraviolet (UV) range, the ability of kinetic ellipsometry to perform fast real-time investigations is illustrated. Thus a 10 ms resolution is needed to perform a detailed analysis of the silicide formation during exposure of a Pd film to silane at 250°C. In the case of plasma enhanced chemical vapour deposition (PECVD), new insights into the complex growth mechanism of microcrystalline silicon (μc-Si) are presented. In particular, the importance of hydrogen etching during μc-Si growth is evidenced. The high sensitivity of infrared phase modulated ellipsometry (IRPME) is illustrated by the study of amorphous silicon (a-Si : H) air oxidation. Si-O-Si and (O n )Si-H stretching vibrations are identified at the film surface at the submonolayer level. The weak reactivity of a-Si : H with atmosphere is correlated with the presence of a hydrogen-rich thin layer at the top surface." @default.
- W2014912699 created "2016-06-24" @default.
- W2014912699 creator A5067440332 @default.
- W2014912699 date "1993-01-01" @default.
- W2014912699 modified "2023-09-27" @default.
- W2014912699 title "In situ studies of semiconductor processes by spectroellipsometry" @default.
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- W2014912699 doi "https://doi.org/10.1016/0169-4332(93)90059-k" @default.
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