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- W2014990900 abstract "We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained." @default.
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- W2014990900 date "2011-06-01" @default.
- W2014990900 modified "2023-09-26" @default.
- W2014990900 title "Structural and optical properties of nonpolar (11−20) a-plane GaN grown on (1−102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy" @default.
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- W2014990900 doi "https://doi.org/10.1016/j.scriptamat.2011.03.017" @default.
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