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• W2015000011 abstract "Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; EA=3.4776 eV, EB=3.4827 eV, and EC=3.502 eV. The spin-orbit parameter Δso=19.7±1.5 meV and the crystal field parameter Δcr=9.3±0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T)=E(0)−λ/[exp(β/T)−1] (λ=0.121 eV, β=316 K)." @default.
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• W2015000011 date "1996-08-05" @default.
• W2015000011 modified "2023-10-14" @default.
• W2015000011 title "Exciton region reflectance of homoepitaxial GaN layers" @default.
• W2015000011 doi "https://doi.org/10.1063/1.117892" @default.
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