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- W2015013094 abstract "The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination." @default.
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- W2015013094 date "2004-02-01" @default.
- W2015013094 modified "2023-10-13" @default.
- W2015013094 title "Influence of epitaxy on the surface conduction of diamond film" @default.
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- W2015013094 doi "https://doi.org/10.1016/j.diamond.2003.10.025" @default.
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