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- W2015020080 abstract "Defects were deliberately induced in SiOx thin films during their deposition using a helicon plasma activated reactive evaporation technique. The films were thermally poled and the poling induced second-order optical nonlinearity was investigated by measuring the second harmonic generation of the samples. It was found that oxygen-rich SiOx thin films containing mainly peroxy radicals enabled a much larger optical nonlinearity than stoichiometric SiO2 films after poling, and their optical nonlinearity was long-time stable; while silicon-rich SiOx thin films containing mainly oxygen vacancy defects presented a smaller and unstable optical nonlinearity after poling." @default.
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- W2015020080 date "2008-06-01" @default.
- W2015020080 modified "2023-10-16" @default.
- W2015020080 title "The effect of defects on the optical nonlinearity of thermally poled SiOx thin films" @default.
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- W2015020080 doi "https://doi.org/10.1016/j.tsf.2007.07.027" @default.
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