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- W2015094470 abstract "An evaluation of the analog performance of p- and nMuGFETs with different TiN metal gate thickness and HfSiO gate dielectrics with and without post-nitridation has been reported. The devices with HfSiON dielectrics showed a lower transconductance and CET, but a higher V T , which is related to an increased V FB . The post-nitridation also reduces the impact of the different TiN thicknesses. A higher intrinsic gain is observed for pFETs with a thinner TiN metal gate and a HfSiO dielectric witch demonstrate overall better analog characteristics." @default.
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- W2015094470 date "2010-10-01" @default.
- W2015094470 modified "2023-10-04" @default.
- W2015094470 title "Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog applications" @default.
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- W2015094470 doi "https://doi.org/10.1109/soi.2010.5641389" @default.
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