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- W2015098055 abstract "In this paper nanoimprint molds with 50nm and 100nm feature size nanostructure were fabricated. The periodic pattern of a positive resist was formed on silicon wafer by electron beam lithography, and then the nanostructure of Si was etched using an inductively coupled plasma reactive ion etching (ICP-RIE) system. During the etching process, different ratio of C <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> F <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</inf> gas was added to the original etching gases SF <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</inf> /O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> . By increasing the C <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> F <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</inf> gas, the sidewall protection was improved. The C <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> F <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</inf> gas also increased the etching resistance of the electron beam resist, and the nanoseale resist patterns were maintained through the etching process. The resist was removed after etching, and then the 50nm periodic nanostructure with aspect ratio 6 was obtained. To achieve nanoimprinting process with less damage, the possible sources of stresses resulting from the molding/demolding process, film solidification and thermomechanical mismatch during cooling were studied." @default.
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- W2015098055 date "2006-01-01" @default.
- W2015098055 modified "2023-09-26" @default.
- W2015098055 title "Fabrication of Periodic Nanostructure in Nanoimprint Process" @default.
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- W2015098055 doi "https://doi.org/10.1109/nano.2006.247719" @default.
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