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- W2015173650 abstract "A short-cavity (GaAl)As stripe geometry laser with a threshold current of 30 mA has been fabricated by a new chemical etch process which uses a multilayer metal mask. The laser is 23 μm long and 12 μm wide, and does not have reflective coatings on the etched facets. Quasi-single-mode operation is obtained in pulsed conditions." @default.
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- W2015173650 date "1982-01-01" @default.
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- W2015173650 title "Short-cavity GaAlAs laser by wet chemical etching" @default.
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- W2015173650 doi "https://doi.org/10.1049/el:19820596" @default.
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