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- W2015175035 abstract "This paper describes the various methods used for the assessment of the breakdown and wear out properties of thin oxides currently employed in CMOS and EEPROM technologies. Standard procedures for breakdown and wear out testing are given in conjunction with the associated test structures required for their accomplishment." @default.
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- W2015175035 title "Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides" @default.
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- W2015175035 doi "https://doi.org/10.1016/s0026-2714(99)00042-6" @default.
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