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• W2015187763 abstract "The interaction between chemisorbed oxygen adatoms (O2(ad)−) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2(ad)− chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2(ad)− chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching." @default.
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• W2015187763 date "2011-11-07" @default.
• W2015187763 modified "2023-09-29" @default.
• W2015187763 title "Surface effect on resistive switching behaviors of ZnO" @default.
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• W2015187763 doi "https://doi.org/10.1063/1.3659296" @default.
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