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• W2015198310 abstract "Solar cells and optical detection devices often incorporate antireflective surfaces to reduce undesired reflection and enhance optical absorption. This letter reports a “black silicon” structure of antireflective porous silicon fabricated by using electrochemical etching. The sample has a gradient-index multilayer structure, i.e., the refraction indices of the structure increase from the top (near the air) to the bottom (near the Si substrate). Reflectance below 5% is obtained over a broad wave number range (3000–28000cm−1) and the depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated result fits the measured spectra well." @default.
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• W2015198310 date "2006-04-24" @default.
• W2015198310 modified "2023-10-16" @default.
• W2015198310 title "Wide-band “black silicon” based on porous silicon" @default.
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• W2015198310 doi "https://doi.org/10.1063/1.2199593" @default.
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