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• W2015228766 abstract "We investigate tensile strained Ge/Si1 − xGex (x = 0.87) multiple quantum wells (MQW) on a Ge virtual substrate abruptly grown on Si for integration in CMOS technology. Two schemes are discussed – Scheme A in situ growth of the MQW stack combined with post-growth rapid thermal annealing (RTA) and Scheme B re-growth of the MQW stack on an RTA strain optimized Ge-VS. Samples are characterized by Raman spectroscopy, X-ray diffraction (XRD), scanning transmission electron microscopy, Brewster transmission and photo-reflectance spectroscopy. The strain in the as-grown virtual substrate of Scheme A, measured with Raman spectroscopy and XRD, increases from 0.17% to 0.24% after RTA to 850 °C. XRD reveals an activated inter-diffusion of the MQWs and, at the highest temperatures (TRTA > 750 °C), a structural relaxation. The MQWs of Scheme B appear to be of inferior quality. The inter-band transitions in this material are comparatively blue shifted and broad, which is attributed to relaxation induced dislocations at the interface between the virtual substrate and the multiple quantum wells." @default.
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• W2015228766 date "2012-06-01" @default.
• W2015228766 modified "2023-10-09" @default.
• W2015228766 title "Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth" @default.
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• W2015228766 doi "https://doi.org/10.1016/j.mseb.2011.10.009" @default.
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