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• W2015307117 abstract "In this article Schottky barrier diodes comprising of a n-n germanium-silicon carbide (Ge–SiC) heterojunction are electrically characterized. Circular transmission line measurements prove that the nickel front and back contacts are Ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behavior. Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (SBH) (Φ) are temperature dependent and that incorrect values of the Richardson constant (A∗∗) are being produced, suggesting an inhomogeneous barrier. Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Φ and A∗∗ that are independent of temperature. The experimental IVT data are replicated using the Tung model. It is proposed that small areas, or patches, making up only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV. The experimental IVT data are also analyzed statistically using the extracted values of Φ to build up a Gaussian distribution of barrier heights, including the standard deviation and a mean SBH of 1.126 eV, which should be analogous to the SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A∗∗ for SiC. However, the C-V analysis did not correlate with the mean SBH as expected." @default.
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• W2015307117 date "2009-11-01" @default.
• W2015307117 modified "2023-09-23" @default.
• W2015307117 title "Analysis of inhomogeneous Ge/SiC heterojunction diodes" @default.
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• W2015307117 doi "https://doi.org/10.1063/1.3255976" @default.
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