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• W2015335246 abstract "MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with multi-gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices was also discussed." @default.
• W2015335246 created "2016-06-24" @default.
• W2015335246 creator A5005749099 @default.
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• W2015335246 date "2008-03-01" @default.
• W2015335246 modified "2023-09-25" @default.
• W2015335246 title "Circuits with innovative devices - challenges and chances" @default.
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• W2015335246 doi "https://doi.org/10.1109/ulis.2008.4527145" @default.
• W2015335246 hasPublicationYear "2008" @default.
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