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- W2015354088 abstract "Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K." @default.
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- W2015354088 date "2003-08-29" @default.
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- W2015354088 title "Carrier-mediated ferromagnetic ordering in Mn ion-implanted<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msup><mml:mrow><mml:mi>p</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow><mml:mi mathvariant=normal>GaAs</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant=normal>C</mml:mi></mml:math>" @default.
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- W2015354088 doi "https://doi.org/10.1103/physrevb.68.085210" @default.
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