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- W2015358839 abstract "Temperature dependence of breakdown voltage in silicon abrupt p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>15</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>18</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> . Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell." @default.
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- W2015358839 title "Temperature dependence of breakdown voltage in silicon abrupt p-n junctions" @default.
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- W2015358839 doi "https://doi.org/10.1109/t-ed.1971.17210" @default.
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