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• W2015364210 endingPage "5425" @default.
• W2015364210 startingPage "5422" @default.
• W2015364210 abstract "Two unique quantum transport features, a clear appearance of Coulomb oscillations and a narrowing of Coulomb gap, are observed in an embedded ferromagnet (Ni) dot in a semiconductor wire after magnetic field application. Magnetic force microscopy analysis suggests the existence of a domain wall inside the dot before the field application, but it disappears after the field application forming a single domain in the dot. If we establish a transport model by assuming that the domain wall plays the role of a ``resistive barrier,'' we can explain those unique transport features in terms of ``Coulomb blockade effects modified by domain dynamics.''" @default.
• W2015364210 created "2016-06-24" @default.
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• W2015364210 date "1998-12-14" @default.
• W2015364210 modified "2023-09-24" @default.
• W2015364210 title "Magnetic Domain Dependent Quantum Transport through a Ferromagnetic Dot Embedded in a Semiconductor Quantum Wire" @default.
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• W2015364210 doi "https://doi.org/10.1103/physrevlett.81.5422" @default.
• W2015364210 hasPublicationYear "1998" @default.
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