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• W2015364678 abstract "physica status solidi (a)Volume 120, Issue 1 p. K1-K5 Short Note Possibilities of X-Ray Interfernce Diffractometry for the Investigation of Ion-Doped Layers V. V. Aristov, V. V. Aristov Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorV. N. Mordkovich, V. N. Mordkovich Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorA. Yu. Nikulin, A. Yu. Nikulin Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorA. A. Snigirev, A. A. Snigirev Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorU. Winter, U. Winter Institute of Semiconductor Physics, Academy of Sciences of the GDR, Frankfurt (Oder) Search for more papers by this authorYu. N. Erokhin, Yu. N. Erokhin Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorP. Zaumseil, P. Zaumseil Institute of Semiconductor Physics, Academy of Sciences of the GDR, Frankfurt (Oder) Search for more papers by this author V. V. Aristov, V. V. Aristov Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorV. N. Mordkovich, V. N. Mordkovich Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorA. Yu. Nikulin, A. Yu. Nikulin Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorA. A. Snigirev, A. A. Snigirev Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorU. Winter, U. Winter Institute of Semiconductor Physics, Academy of Sciences of the GDR, Frankfurt (Oder) Search for more papers by this authorYu. N. Erokhin, Yu. N. Erokhin Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorP. Zaumseil, P. Zaumseil Institute of Semiconductor Physics, Academy of Sciences of the GDR, Frankfurt (Oder) Search for more papers by this author First published: 16 July 1990 https://doi.org/10.1002/pssa.2211200127Citations: 11 Moscow District, SU-142432 Chernogolovka, USSR. PSF 409, DDR-1200 Frankfurt (Oder), GDR. 1 Physica AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL References 1 V. V. Aristov, A. Yu. Nikulin, A. A. Snigirev, and P. Zaumseil, phys. stat. sol. (a) 95, 81 (1986). 2 V. V. Aristov, U. Winter, A. Yu. Nikulin, S. V. Redkin, A. A. Snigirev, P. Zaumseil, and V. A. Yunkin, phys. stat. sol. (a) 108, 651 (1988). 3 V. V. Aristov, S. M. Kuzentsov, A. Yu. Nikulin, and A. A. Snigirev, Poverkhnost 6, 41 (1988). 4 V. V. Aristov, Yu. N. Erokhin, S. M. Kuznetsov, A. Yu. Nikulin, and A. A. Snigirev, Mikroelektronika 17, 518 (1988). 5 F. N. Komaleeva, V. N. Mordkovich, E. M. Temper, and V. A. Kharchenko, Fiz. Tekh. Poluprov. 10, 320 (1976). 6 M. Servidori, Nuclear Instrum. and Methods B19/20, 443 (1987). Citing Literature Volume120, Issue116 July 1990Pages K1-K5 ReferencesRelatedInformation" @default.
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