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• W2015380576 abstract "Abstract We compared the suitability of tantalum pentoxide (Ta2O5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal–insulator–metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 A/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 A/cycle, 7.3 g/cm3 and ~ 40, respectively)." @default.
• W2015380576 created "2016-06-24" @default.
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• W2015380576 date "2013-09-01" @default.
• W2015380576 modified "2023-10-14" @default.
• W2015380576 title "Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal capacitor applications" @default.
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• W2015380576 doi "https://doi.org/10.1016/j.tsf.2013.06.050" @default.
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