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• W2015388638 abstract "Thermal stability of the ZrO2∕Zr–silicate∕Si structure and the Zr–silicide formation were investigated by photoemission spectroscopy depending on the annealing temperature in ultrahigh vacuum. By the annealing below 860°C, the interfacial layer thickness of the Zr–silicate decreased although the ZrO2 top layer was not affected. The annealing at 860°C caused the interfacial Zr–silicate layer to disappear. By the annealing above 860°C, the metallic Zr components appeared and the metallic clusters were formed. High-resolution photoemission spectra have revealed that the clusters consist of a ZrSi2 layer. Valence-band spectra depending on the annealing temperature provide us with the information about the crystallization in the ZrO2 layer." @default.
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• W2015388638 date "2004-12-13" @default.
• W2015388638 modified "2023-10-01" @default.
• W2015388638 title "Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si" @default.
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• W2015388638 doi "https://doi.org/10.1063/1.1835001" @default.
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