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- W2015425689 abstract "In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al<sub>2</sub>O<sub>3</sub>/u-GaN/AlN buffer/ Si substrate and Al<sub>2</sub>O<sub>3</sub> (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl<sub>3</sub> plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al<sub>2</sub>O<sub>3</sub> was grown on the treated surface to reduce the interface state trap densities (D<sub>it</sub>). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (V<sub>bk</sub>), on-resistance (R<sub>on</sub>), threshold voltage (V<sub>th</sub>) and drain current (I<sub>d</sub>) of MOS-HEMT. The V<sub>th</sub> of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl<sub>3</sub> plasma and organic solvents clean treatment shows the lowest V<sub>th</sub> of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article." @default.
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- W2015425689 date "2015-03-13" @default.
- W2015425689 modified "2023-10-18" @default.
- W2015425689 title "Study of interface state trap density on characteristics of MOS-HEMT" @default.
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- W2015425689 doi "https://doi.org/10.1117/12.2076678" @default.
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