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- W2015445838 abstract "The phenomena related to the electrical activation of low energy implanted B (3keV,2×1014B∕cm2) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B–Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2to0.38μm and annealing at 800°C from 12to200min in N2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2μm window size is more than one order of magnitude higher than for the 0.38μm window." @default.
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- W2015445838 date "2006-01-01" @default.
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- W2015445838 title "Size effects on the electrical activation of low-energy implanted B in Si" @default.
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- W2015445838 doi "https://doi.org/10.1116/1.2073367" @default.
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